Characterization, Modeling, and Test of Intermediate State Defects in STT-MRAMs

Understanding defects in magnetic tunnel junctions (MTJs) and their faulty behaviors are paramount for developing high-quality test solutions STT-MRAM. This article applies the advanced device-aware to intermediate (IM) state MTJ devices based on silicon measurements circuit simulations. An IM manifests itself as an abnormal third resistive state, which differs from two bi-stable states of MTJ. We performed with diameter ranging 60 nm 120 nm; results show that occurrence probability strongly depends switching direction, device size, bias voltage. demonstrate conventional resistor-based fault modeling approach fails appropriately model such a defect. Therefore, is applied. first physically defect incorporate it into Verilog-A compact calibrate data. Thereafter, this used systematic analysis simulations obtain accurate realistic faults pre-defined space. Our simulation leads intermittent write transition faults. Finally, we propose implement solution detect